CY7C1339G-133AXET Cypress Semiconductor Corp, CY7C1339G-133AXET Datasheet - Page 8

• Manufacturer Part Number: CY7C1339G-133AXET
• Description: IC SRAM 4MBIT 133MHZ 100LQFP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1339G-133AXET

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05520 Rev. *F
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to V
Electrical Characteristics
V
V
V
V
V
V
I
I
I
I
I
Notes:
Parameter
10. TPower-up: Assumes a linear ramp from 0V to V
X
OZ
DD
SB1
SB2
9. Overshoot: V
DD
DDQ
OH
OL
IH
IL
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power-down
Current—TTL Inputs
Automatic CE
Power-down
Current—CMOS Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND........ –0.5V to +4.6V
+1.5V (Pulse width less than t
Relative to GND ...... –0.5V to +V
[9]
[9]
Over the Operating Range
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
f = 0
DD
DD
IN
DD
IN
DD
MAX
≥ V
MAX
≤ 0.3V or V
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
(min.) within 200 ms. During this time V
IH
= 1/t
= 1/t
I
SS
DD
SS
DD
I
CYC
or V
≤ V
≤ V
DDQ
/2), undershoot: V
CYC
CYC
OUT
OH
OH
OL
OL
DDQ
DDQ,
IN
IN
+ 0.5V
= 8.0 mA
= 1.0 mA
≤ V
= –4.0 mA
= –1.0 mA
= 0 mA,
> V
Output Disabled
DD
IL
Test Conditions
DDQ
[9, 10]
Commercial
Automotive 7.5-ns cycle, 133 MHz
Industrial/
– 0.3V,
IL
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
(AC) > –2V (Pulse width less than t
Commercial
Industrial
Automotive
Range
IH
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle, 133 MHz
All speeds
< V
DD
–40°C to +125°C
and V
–40°C to +85°C
Temperature
0°C to +70°C
Ambient
DDQ
< V
DD
CYC
.
/2).
3.135
2.375
Min.
–5%/+10%
–0.3
–0.3
–30
2.4
2.0
2.0
1.7
–5
–5
–5
3.3V
V
CY7C1339G
DD
V
V
DD
DD
Max.
V
Page 8 of 18
325
265
240
225
120
100
110
115
3.6
0.4
0.4
0.8
0.7
30
90
40
+ 0.3V
+ 0.3V
5
5
5
DD
2.5V –5%
DD
to V
V
+ 0.5V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
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