TC58FVM6B2ATG-65 Toshiba, TC58FVM6B2ATG-65 Datasheet - Page 21

• Manufacturer Part Number: TC58FVM6B2ATG-65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6B2ATG-65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
RECOMMENDED DC OPERATING CONDITIONS
V
V
V
V
V
P
T
T
T
I
(1) Outputs should be shorted for no more than one second.
C
C
C
This parameter is periodically sampled and is not tested for every device.
V
V
V
V
V
Ta
(1) −2 V (pulse width of 20 ns max)
(2) +2 V (pulse width of 20 ns max)
(3) Do not apply V
OSHORT
solder
stg
opr
DD
IN
DQ
IDH
ACCH
D
IN
OUT
IN2
DD
IH
IL
ID
ACC
SYMBOL
SYMBOL
SYMBOL
No more than one output should be shorted at a time.
V
Input Voltage
Input/Output Voltage
Maximum Input Voltage for A9, OE and RESET
Maximum Input Voltage for
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
Output Short-Circuit Current
Input Pin Capacitance
Output Pin Capacitance
Control Pin Capacitance
V
Input High-Level Voltage
Input Low-Level Voltage
High-Level Voltage for A9, OE and RESET
High-Level Voltage for
Operating Temperature
DD
DD
ID
Supply Voltage
Supply Voltage
/V
(Ta = = = = 25°C, f = = = = 1 MHz)
ACC
when the supply voltage is not within the device's recommended operating voltage range.
PARAMETER
WP
/ACC
(1)
WP
PARAMETER
PARAMETER
/ACC
(3)
(3)
TC58FVM6(T/B)2A(FT/XB)65
−0.6~V
−0.6~V
V
V
V
CONDITION
0.7 × V
IN
OUT
IN
−0.6~4.6
−55~150
RANGE
DD
DD
−40~85
−0.3
= 0 V
= 0 V
13.0
10.5
MIN
11.4
126
260
100
−40
2.3
8.5
+ 0.5 (≤ 4.6)
+ 0.5 (≤ 4.6)
= 0 V
(1)
DD
2002-10-24 21/61
V
0.2 × V
DD
MAX
MAX
TBD
TBD
TBD
12.6
3.6
9.5
85
+ 0.3
DD
(2)
UNIT
UNIT
UNIT
mW
mA
°C
°C
°C
pF
pF
pF
°C
V
V
V
V
V
V