TC58FVM6B2ATG-65 Toshiba, TC58FVM6B2ATG-65 Datasheet - Page 22

• Manufacturer Part Number: TC58FVM6B2ATG-65
• Description: IC FLASH 64MBIT 65NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC58FVM6B2ATG-65

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 64M (8Mx8, 4Mx16)
• Speed: 65ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DC CHARACTERISTICS
AC TEST CONDITIONS
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
(2) (I
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
LI
LO
DDO1
DDO2
DDO3
DDO4
DDO5
DDO6
DDO7
DDO8
DDS1
DDS2
ID
ACC
OH
OL
LKO
SYMBOL
DDO1+
I
DDO7
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
Current
V
V
V
Read-While-Program Current
V
Read-while-Erase Current
V
Erase-Suspend Current
V
Current
V
Increment Read Current(2)
V
V
(Automatic Sleep Mode
High-Voltage Input Current for
A9, OE and RESET
High-Voltage Input Current for
Low-V
WP
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
/ACC
×7)／8words
Average Random Read
Average Program Current V
Average Erase Current
Average
Average
Average Program-while-
Average Page Read
Average Address
Standby Current
Standby Current
DD
PARAMETER
Lock-out Voltage
PARAMETER
(1)
)
0 V ≤ V
0 V ≤ V
I
I
I
V
t
V
V
t
V
t
V
V
t
V
t
t
or RESET = V
V
V
11.4 V ≤ V
8.5 V ≤ V
CE = RESET = V
OH
OH
OL
RC
RC
RC
PRC
RC
PRC
IN
IN
IN
IN
IN
IN
IN
IN
IH
IL
= V
= 4.0 mA
= V
= 100 ns (MIN)
= V
= V
= V
= 100 ns (MIN)
= V
= 100 ns (MIN)
= V
= V
= V
= 100 ns (MIN)
= V
= −0.1 mA
= −2.5 mA
= 25 ns (MIN)
= 25ns (MIN)
SS
IN
OUT
IH
IH
IH
IH
IH
IH
IH
IH
DD
CONDITION
ACC
/V
/V
/V
/V
/V
/V
/V
/V
≤ V
ID
IL
IL
IL
IL
IL
IL
IL
IL
≤ V
≤ 12.6 V
, I
, I
, I
, I
, I
, I
, I
, I
DD
≤ 9.5 V

OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
DD
SS
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
= 0 mA
DD
C
L
(100 pF) + 1 TTL Gate/C
TC58FVM6(T/B)2A(FT/XB)65
0.85 × V
V
DD
MIN
1.5















− 0.4
DD
VDD/2, VDD/2
VDD/2, VDD/2
CONDITION
V
DD
5 ns
, 0.0 V
TYP





35
43
43



8
8
8
1
5
2
2
L
(30 pF) + 1 TTL Gate
2002-10-24 22/61
MAX
0.4
2.0
±1
±1
55
15
15
70
70
15
11
10
10
35
20


5
UNIT
mA
mA
µA
µA
V
V