TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 41

• Manufacturer Part Number: TE28F800C3BD70
• Description: IC FLASH 8MBIT 70NS 48TSOP
• Manufacturer: Intel

Specifications of TE28F800C3BD70

• Format - Memory: FLASH
• Memory Type: Advanced + Boot Block FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 868489

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Datasheet
NOTES:
R10
1. OE# may be delayed up to t
2. Sampled, but not 100% tested.
3. See
4. See
R1
R2
R3
R4
R5
R6
R7
R8
R9
#
input slew rate.
Table 15. Read Operations—32 Mbit Density
t
Sym
t
t
t
t
t
t
t
t
AVAV
GHQ
GLQ
PHQ
GLQ
EHQ
t
AVQ
ELQ
ELQ
OH
Figure 8, “Read Operation Waveform” on page
Figure 11, “AC Input/Output Reference Waveform” on page 49
V
V
V
V
X
X
Z
Z
Read Cycle Time
Address to Output
Delay
CE# to Output
Delay
OE# to Output
Delay
RP# to Output
Delay
CE# to Output in
Low Z
OE# to Output in
Low Z
CE# to Output in
High Z
OE# to Output in
High Z
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
meter
Para-
Product
Density
V
CC
2.7 V–3.6 V
ELQV–
Min
70
0
0
0
70 ns
t
GLQV
Max
150
70
70
20
20
20
after the falling edge of CE# without impact on t
2.7 V–3.6 V
Min
90
0
0
0
90 ns
Max
150
90
90
20
20
20
42.
3.0 V–3.3 V
Min
90
0
0
0
Intel
Max
150
90
90
30
20
20
32 Mbit
100 ns
£
for timing measurements and maximum allowable
Advanced+ Boot Block Flash Memory (C3)
2.7 V–3.3 V
Min
100
0
0
0
Max
100
100
150
30
20
20
3.0 V–3.3 V 2.7 V–3.3 V
Min
100
0
0
0
ELQV
Max
.
100
100
150
30
20
20
110 ns
Min
110
0
0
0
Max
110
110
150
30
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
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