TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 54

• Manufacturer Part Number: TE28F800C3BD70
• Description: IC FLASH 8MBIT 70NS 48TSOP
• Manufacturer: Intel

Specifications of TE28F800C3BD70

• Format - Memory: FLASH
• Memory Type: Advanced + Boot Block FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 868489

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Intel
54
Figure 15. Erase Suspend / Resume Flowchart
£
Advanced+ Boot Block Flash Memory (C3)
(Erase Resume)
(Read Array)
Any Address
Any Address
Any Address
Read Status
Write 0xB0,
Write 0x70,
Read Array
Write 0xD0,
Write 0xFF
Resumed
Register
Reading
SR[7] =
SR[6] =
Erase
Start
Data
Done
1
1
1
(Erase Suspend)
(Read Status)
0
0
0
ERASE SUSPEND / RESUME PROCEDURE
Write 0xFF
Read Array
Completed
Erase
Data
(Read Array)
Operation Command
Read or
Read
Write
Write
Write
Write
Write
Bus
Idle
Idle
Read Array
or Program
Suspend
Program
Resume
Status
Erase
Read
None
None
None
None
Data = 0x70
Addr = Any address
Data = 0xB0
Addr = Any address
Status Register data. Toggle CE# or
OE# to update Status register;
Addr = Any Address
Check SR[7]:
1 = WSM ready
0 = WSM busy
Check SR[6]:
1 = Erase suspended
0 = Erase completed
Data = 0xFF or 0x40
Addr = Any address
Read array or program data from/to
block other than the one being erased
Data = 0xD0
Addr = Any address
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