TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 52

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TE28F800C3BD70

Manufacturer Part Number
TE28F800C3BD70
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
Intel
Datasheet

Specifications of TE28F800C3BD70

Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
8M (512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
868489
查询"TE28F800C3TA70"供应商
Intel
Appendix B Flow Charts
52
Figure 13. Word Program Flowchart
£
Advanced+ Boot Block Flash Memory (C3)
Word Address
Word Address
Read Status
Read Status
Write 0x40,
Write Data,
Full Status
(if desired)
Successful
Complete
Register
Program
Register
Program
SR[4] =
SR[7] =
SR[3] =
SR[1] =
Check
Start
1
0
0
0
0
1
1
1
(Setup)
(Confirm)
Protect Error
V
Suspend?
Program
P P
Device
Error
Error
Range
No
FULL STATUS CHECK PROCEDURE
WORD PROGRAM PROCEDURE
Yes
Program
Suspend
Loop
Operation
Repeat for subsequent Word Program operations.
Full Status Register check can be done after each program, or
after a sequence of program operations.
Write 0xFF after the last operation to set to the Read Array
state.
Operation
SR[3] MUST be cleared before the Write State Machine will
allow further program attempts.
If an error is detected, clear the Status Register before
continuing operations - only the Clear Staus Register
command clears the Status Register error bits.
Write
Write
Read
Bus
Bus
Idle
Idle
Idle
Idle
Command
Command
Program
Setup
None
None
None
None
None
Data
Data = 0x40
Addr = Location to program
Data = Data to program
Addr = Location to program
Status register data: Toggle CE# or
OE# to update Status Register
Check SR[7]
1 = WSM Ready
0 = WSM Busy
Check SR[3]:
1 = V
Check SR[4]:
1 = Data Program Error
Check SR[1]:
1 = Block locked; operation aborted
P P
Error
Comments
Comments
Datasheet

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