ICB2FL01G Infineon Technologies, ICB2FL01G Datasheet - Page 10

• Manufacturer Part Number: ICB2FL01G
• Description: IC SMART BALLAST CONTROL DSO-19
• Manufacturer: Infineon Technologies
• Type: PFC/Ballast Controllerr

Specifications of ICB2FL01G

• Frequency: 20 ~ 120 kHz
• Current - Supply: 4.2mA
• Voltage - Supply: 10.6 V ~ 17.5 V
• Operating Temperature: -25°C ~ 125°C
• Package / Case: DSO-19
• Packages: PG-DSO-19
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Lead Free Status / Rohs Status: Details
• Other names: SP000363741

HSVCC (High-side supply voltage, Pin 18)
This pin provides the power supply of the high-
side ground related section of the IC. An
external capacitor between pin 17 and pin 18
acts like a floating battery which has to be
recharged cycle by cycle via high voltage diode
from low-side supply voltage during on-time of
the low-side MOSFET. There is an UVLO
threshold with hysteresis that enables high-side
section at 10.1V and disables it at 8.4V.
HSGD (High-side Gate drive, Pin 19)
The Gate of the high-side MOSFET in a half-
bridge inverter topology is controlled by this pin.
There is an active L-level during UVLO and a
Datasheet
2
nd
Generation FL-Controller for FL-Ballasts
Page 10 of 56
limitation of the max H-level at 11.0 V during
normal operation. The switching characteristics
are the same as described for LSGD (pin 2). It
is recommended to use a resistor of about 10 Ω
between drive pin and Gate in order to avoid
oscillations and in order to shift the power
dissipation of discharging the Gate capacitance
into this resistor. The dead time between LSGD
signal and HSGD signal is self adapting
between 1.25µs and 2.5µs (typically).
Not connected (Pin 20)
This pin is internally not connected.
ICB2FL01G
V1.2