MCZ33927EKR2 Freescale Semiconductor, MCZ33927EKR2 Datasheet - Page 15
![IC FET PRE-DRIVER 3PH 54-SOIC](/photos/15/90/159027/soic-54_sml.jpg)
MCZ33927EKR2
Manufacturer Part Number
MCZ33927EKR2
Description
IC FET PRE-DRIVER 3PH 54-SOIC
Manufacturer
Freescale Semiconductor
Specifications of MCZ33927EKR2
Configuration
3 Phase Bridge
Input Type
Inverting and Non-Inverting
Delay Time
265ns
Current - Peak
600mA
Number Of Configurations
1
Number Of Outputs
3
High Side Voltage - Max (bootstrap)
75V
Voltage - Supply
8 V ~ 40 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (7.5mm Width) Exposed Pad, 54-eSOIC, 54-HSOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 4. Dynamic Electrical Characteristics (continued)
values noted reflect the approximate parameter means at T
Analog Integrated Circuit Device Data
Freescale Semiconductor
CURRENT SENSE AMPLIFIER (CONTINUED)
SUPERVISORY AND CONTROL CIRCUITS
Notes
Output Rise Time to 90%
Output Fall Time to 10%
Slew Rate at Gain = 5.0
Phase Margin at Gain = 5.0
Unity Gain Bandwidth
Bandwidth at Gain = 15
Common Mode Rejection (CMR)
CMR = 20*Log(V
EN1 and EN2 Propagation Delay
INT Rise Time CL = 100 pF
INT Fall Time CL = 100 pF
INT Propagation Time
42.
43.
Characteristics noted under conditions 8.0V ≤ V
RL = 1kΩ, C
0.3 < V
Gain = 5 to 15
RL = 1kΩ
C
0.3 < V
Gain = 5 to 15
RL = 1 κΩ, C
RL = 1 κΩ, C
R
V
V
R
Freq = 100kHz
Freq = 1.0MHz
Freq = 10MHz
IN_CM
IN
L
L
FB
= 500pF
= 1 κΩ, C
_
This parameter is guaranteed by design, not production tested.
Rise and fall times are measured from the transition of a step function on the input to 90% of the change in output voltage.
DIF
= 15 kΩ, V
O
O
= 400mV*sin(2*π*freq*t)
= 0.0V, RS = 1kΩ
< 4.8V
< 4.8V
L
L
L
L
= 500 pF
OUT
= 50pF
= 20pF
= 100pF
REFIN
/V
(42)
IN
(42)
(42)
= 0.0V
_
(43)
(43)
CM
(42)
)
Characteristic
(42)
with V
IN
PWR
= V
BAT
A
= 25°C under nominal conditions unless otherwise noted.
≤ 40V, -40°C ≤ T
t
Symbol
t
t
PROPINT
IS_RISE
IS_FALL
t
SR
BW
CMR
t
G
t
PROP
RINT
FINT
f
BW
M
(5)
G
A
≤ 125°C, unless otherwise noted. Typical
DYNAMIC ELECTRICAL CHARACTERISTICS
Min
5.0
2.0
50
40
30
10
10
–
–
–
–
–
–
ELECTRICAL CHARACTERISTICS
Typ
30
20
–
–
–
–
–
–
–
–
–
–
–
Max
280
250
200
250
1.0
1.0
–
–
–
–
–
–
–
Unit
V/µs
MHz
MHz
dB
µs
µs
ns
ns
ns
ns
°
33927
15