MLP1N06CL ON Semiconductor, MLP1N06CL Datasheet - Page 2

• Manufacturer Part Number: MLP1N06CL
• Description: MOSFET N-CH 1A 62V TO-220AB
• Manufacturer: ON Semiconductor
• Series: SMARTDISCRETES™r
• Type: Low Sider

Specifications of MLP1N06CL

• Input Type: Non-Inverting
• Number Of Outputs: 1
• Operating Temperature: -50°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 1.4 S
• Drain-source Breakdown Voltage: 59 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 1 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Supply: -
• Current - Output / Channel: -
• On-state Resistance: -
• Current - Peak Output: -
• Lead Free Status / Rohs Status: No

1. Indicates Pulse Test: Pulse Width
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1.)
RESISTIVE SWITCHING CHARACTERISTICS (Note 1.)
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
Drain–to–Source Sustaining Voltage (Internally Clamped)
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Forward Transconductance (I D = 1.0 A, V DS = 10 V)
Static Source–to–Drain Diode Voltage (I S = 1.0 A, V GS = 0)
Static Drain Current Limit
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(Starting T J = 25 C, I D = 2.0 A, L = 40 mH) (Figure 6)
(I D = 20 mA, V GS = 0)
(I D = 20 mA, V GS = 0, T J = 150 C)
(V DS = 45 V, V GS = 0)
(V DS = 45 V, V GS = 0, T J = 150 C)
(V G = 5.0 V, V DS = 0)
(V G = 5.0 V, V DS = 0, T J = 150 C)
(I D = 250 A, V DS = V GS )
(I D = 250 A, V DS = V GS , T J = 150 C)
(I D = 1.0 A, V GS = 4.0 V)
(I D = 1.0 A, V GS = 5.0 V)
(I D = 1.0 A, V GS = 4.0 V, T J = 150 C)
(I D = 1.0 A, V GS = 5.0 V, T J = 150 C)
(V GS = 5.0 V, V DS = 10 V)
(V GS = 5.0 V, V DS = 10 V, T J = 150 C)
Characteristic
V GS = 5.0 V, R G = 50 Ohms)
Rating
(V DD = 25 V, I D = 1.0 A,
(V DD
300 s, Duty Cycle
25 V, I D
(T J = 25 C unless otherwise noted)
1.0 A,
http://onsemi.com
2.0%.
MLP1N06CL
V (BR)DSS
R DS(on)
2
Symbol
V GS(th)
I D(lim)
t d(on)
t d(off)
I GSS
I DSS
V SD
g FS
t r
t f
Symbol
E AS
Min
1.0
0.6
1.0
2.0
1.1
59
59
–
–
–
–
–
–
–
–
–
–
–
–
–
0.63
0.59
Typ
0.6
6.0
0.5
1.0
1.5
1.1
1.0
1.4
1.1
2.3
1.3
1.2
4.0
4.0
3.0
62
62
–
Value
80
Max
0.75
0.75
2.75
5.0
5.0
2.0
1.6
1.9
1.8
1.5
1.8
2.0
6.0
6.0
5.0
65
65
20
20
–
Unit
mJ
Ohms
mhos
Unit
Vdc
Vdc
Vdc
Adc
Adc
A
s