TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 21

• Manufacturer Part Number: TC58V64BDC
• Description: IC 64MBIT NAND FLASH 3V 44-TSOP
• Manufacturer: Toshiba

Specifications of TC58V64BDC

• Memory Size: 8MB
• Memory Type: EEPROM - Smart Media
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Auto Page Program
after the address and data have been input. The sequence of command, address and data input is shown below.
(Refer to the detailed timing chart.)
Auto Block Erase
which follows the Erase Setup command “60H”. This two-cycle process for Erase operations acts as an ertra
layer of protection from aceidental erasure of data due to external noise. The device automatically executes the
Erase and Verify operations.
The device carries out an Automatic Page Program operation when it receives a “10H” Program command
Data input
The Auto Block Erase operation starts on the rising edge of WE after the Erase Start command “D0H”
command
RY
RY
Data input
/
/
80
BY
BY
Selected
Figure 7. Auto Page Program operation
page
Address
60
Program
input
Block Address
input: 2 cycles
Data input
0 to 527
Erase Start
Reading & verification
command
command
Program
D0
10
page on the rising edge of WE following input of the “10H” command.
After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming
does not succeed, the Program/Verify operation is repeated by the
device until success is achieved or until the maximum loop number set in
the device is reached.
The data is transferred (programmed) from the register to the selected
Busy
completion of the operation.
RY
Status Read
Status Read
command
command
/
BY
70
70
automatically returns to Ready after
I/O
I/O
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Fail
Fail
Pass
Pass
TC58V64BDC