TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 22

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TC58V64BDC

Manufacturer Part Number
TC58V64BDC
Description
IC 64MBIT NAND FLASH 3V 44-TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58V64BDC

Memory Size
8MB
Memory Type
EEPROM - Smart Media
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Internal erase
Internal V
Reset
generated voltage is discharged to 0 volts and the device enters Wait state.
The Reset mode stops all operations. For example, in the case of a Program or Erase operation the internally
The response to an “FFH” Reset command input during the various device operations is as follows:
When a Reset (FFH) command is input during programming
When a Reset (FFH) command is input during erasing
When a Reset (FFH) command is input during Read operation
When a Status Read command (70H) is input after a Reset
When two or more Reset commands are input in succession
voltage
RY
RY
RY
RY
RY
RY
/
/
/
/
/
/
BY
BY
BY
BY
BY
BY
PP
80
00
FF
FF
The second
D0
10
70
FF
command is invalid, but the third
(1)
FF
70
t
FF
FF
FF
RST
t
(max 6 ms)
RST
(max 10 ms)
t
RST
(max 500 ms)
FF
(2)
FF
I/O status: Pass/Fail ® Pass
I/O status: Ready/Busy ® Busy
command is
Ready/Busy ® Ready
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TC58V64BDC
00
Figure 10.
Figure 12.
Figure 11.
00
00
Figure 8.
Figure 9.
(3)
FF

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