MT16LSDF6464HG-133D2 Micron Technology Inc, MT16LSDF6464HG-133D2 Datasheet - Page 11

• Manufacturer Part Number: MT16LSDF6464HG-133D2
• Description: MODULE SDRAM 512MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

I
(Notes: 1, 5, 6, 11, 13; notes appear following the parameter tables) (V
I
(Notes: 1, 5, 6, 11, 13; notes appear following the parameter tables) (V
32/64 Meg x 64 SDRAM SODIMM
SD16C32_64x64HG_A.pm6; Rev. A, Pub 7/01
*DRAM components only.
a - Value calculated as one module bank in this operating condition, and all other banks in Power-Down Mode.
b - Value calculated reflects all module banks in this operating condition.
PARAMETER/CONDITION - MT8LSDF3264HG
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
All banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
PARAMETER/CONDITION - MT16LSDF6464HG
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
All banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
DD
DD
SPECIFICATIONS AND CONDITIONS* -
SPECIFICATIONS AND CONDITIONS* -
t
t
RC =
RC =
t
t
RC (MIN)
RC (MIN)
t
t
Standard
Low power (L)
t
t
Standard
Low power (L)
RFC =
RFC = 7.81 µs
RFC =
RFC = 7.81 µs
t
t
RCD met;
RCD met;
t
t
RFC (MIN)
RFC (MIN)
256MB MODULE
512MB MODULE
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL -13E -133 -10E UNITS NOTES
SYMBOL -13E -133 -10E UNITS NOTES
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
2
5
6
7
7
2
5
6
7
7
1
3
4
1
3
4
, V
, V
a
b
a
a
b
b
b
b
a
b
a
a
b
b
b
b
DD
DD
Q = +3.3V ±0.3V)
Q = +3.3V ±0.3V)
1,296 1,216 1,136
1,336 1,216 1,136
5,280 4,960 4,320
1,056 1,016 1,016
1,096 1,096 1,096
4,560 4,320 4,320
416
376
32
32
16
32
40
24
48
64
SDRAM SODIMM
256/512MB (x64)
MAX
MAX
416
376
32
48
32
16
32
64
40
24
336
376
32
48
32
16
32
64
40
24
PRELIMINARY
©2001, Micron Technology, Inc.
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
19, 29
19, 29
19, 29
18, 19,
29, 30
19, 29
19, 29
19, 29
18, 19,
29, 30
3, 18,
3, 12,
3, 18,
3, 12,
3, 18,
3, 12,
3, 18,
3, 12,
29
29
4
4