MT16LSDF6464HG-133D2 Micron Technology Inc, MT16LSDF6464HG-133D2 Datasheet - Page 18

• Manufacturer Part Number: MT16LSDF6464HG-133D2
• Description: MODULE SDRAM 512MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SERIAL PRESENCE-DETECT MATRIX
(Note: 1)
*The value of
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
32/64 Meg x 64 SDRAM SODIMM
SD16C32_64x64HG_A.pm6; Rev. A, Pub 7/01
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
NUMBER OF BYTES USED BY MICRON
TOTAL NUMBER OF SPD MEMORY BYTES
MEMORY TYPE
NUMBER OF ROW ADDRESSES
NUMBER OF COLUMN ADDRESSES
NUMBER OF BANKS
MODULE DATA WIDTH (bit 0 is LSB)
MODULE DATA WIDTH (bit 7 is MSB)
MODULE VOLTAGE INTERFACE LEVELS
SDRAM CYCLE TIME,
(CAS LATENCY = 3)
SDRAM ACCESS FROM CLOCK,
(CAS LATENCY = 3)
MODULE CONFIGURATION TYPE
REFRESH RATE/TYPE
SDRAM WIDTH (PRIMARY SDRAM)
ERROR-CHECKING SDRAM DATA WIDTH
MIN. CLOCK DELAY FROM BACK-TO-BACK
RANDOM COLUMN ADDRESSES,
BURST LENGTHS SUPPORTED
NUMBER OF BANKS ON SDRAM DEVICE
CAS LATENCIES SUPPORTED
CS LATENCY
WE LATENCY
SDRAM MODULE ATTRIBUTES
SDRAM DEVICE ATTRIBUTES: GENERAL
SDRAM CYCLE TIME,
(CAS LATENCY = 2)
SDRAM ACCESS FROM CLK,
(CAS LATENCY = 2)
SDRAM CYCLE TIME,
(CAS LATENCY = 1)
SDRAM ACCESS FROM CLK,
(CAS LATENCY = 1)
MINIMUM ROW PRECHARGE TIME,
MINIMUM ROW ACTIVE TO ROW ACTIVE,
t
MINIMUM RAS# TO CAS# DELAY,
MINIMUM RAS# PULSE WIDTH,
(
RRD
t
RAS MODULE =
t
RAS used for the -13E module is calculated from
DESCRIPTION
t
RC -
t
t
t
CK
CK
CK
t
RP)
t
t
AC
AC
t
AC
t
CCD
t
RCD
t
RP
1, 2, 4, 8, FULL-PAGE
ENTRY (VERSION)
5.4 (-13E/-133)
10 (-133/-10E)
20 (-133/-10E)
20 (-133/-10E)
UNBUFFERED
6 (-133/-10E)
NON PARITY
15.625/SELF
45 (-13E)*
7.5 (-133)
7.5 (-13E)
5.4 (-13E)
44 (-133)
50 (-10E)
15 (-13E)
15 (-133)
20 (-10E)
15 (-13E)
14 (-13E)
7 (-13E)
8 (-10E)
6 (-10E)
SDRAM
LVTTL
NONE
128
256
2, 3
12
10
64
14
2
0
8
1
4
1
1
–
–
MT16LSDF3264G
18
t
RC -
t
RP. Actual device spec value is 37ns.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HEX VALUE
0A
A0
80
08
04
0C
02
40
00
01
70
75
80
54
60
00
80
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
2D
2C
32
1, 2, 4, 8, FULL-PAGE
ENTRY (VERSION)
5.4 (-13E/-133
10 (-133/-10E)
20 (-133/-10E)
UNBUFFERED
6 (-133/-10E)
NON PARITY
45 (-13E)*
7.5 (-133)
7.5 (-13E)
5.4 (-13E)
44 (-133)
50 (-10E)
7.8/SELF
15 (-13E)
8 (-10E)
6 (-10E)
SDRAM
SDRAM SODIMM
LVTTL
NONE
256/512MB (x64)
128
256
2,3
13
11
64
00
70
14
00
00
0F
14
0E
0F
14
2
8
1
4
1
1
MT16LSDF6464HG
PRELIMINARY
©2001, Micron Technology, Inc.
HEX VALUE
80
08
04
0D
0B
02
40
00
01
70
75
80
54
60
00
82
08
00
01
8F
04
06
01
01
00
0E
75
A0
54
60
00
00
0F
14
0E
0F
14
0F
14
2D
2C
32