MT8HTF3264AY-53EB3 Micron Technology Inc, MT8HTF3264AY-53EB3 Datasheet - Page 15
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MT8HTF3264AY-53EB3
Manufacturer Part Number
MT8HTF3264AY-53EB3
Description
MODULE DDR2 SDRAM 256MB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT8HTF3264AY-53EB3.pdf
(18 pages)
Specifications of MT8HTF3264AY-53EB3
Memory Type
DDR2 SDRAM
Memory Size
256MB
Speed
267MHz
Package / Case
240-DIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
240UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
256Mb
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.28A
Number Of Elements
8
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
240
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1144
Table 11: DDR2 I
Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8)
component data sheet
PDF: 09005aef80e2ff8d
htf8c32_64_128x64aypdf - Rev. G 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 512MB (Continued)
),
t
RRD =
t
RRD (I
256MB, 512MB, 1GB (x64, SR) 240-Pin DDR2 SDRAM UDIMM
DD
), AL =
DD
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
15
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
2400
-80E
-800
1920
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
1800
-53E
Specifications
-40E
1760
Units
mA