MT18VDDF12872DY-40BD3 Micron Technology Inc, MT18VDDF12872DY-40BD3 Datasheet - Page 32

• Manufacturer Part Number: MT18VDDF12872DY-40BD3
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872DY-40BD3

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.8A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 23: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 34
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used By Micron
Total Number of Bytes In SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
note 1)
SDRAM Access From Clock,
2.5
Module Configuration Type
Refresh Rate/type
SDRAM Device Width (Primary DDR SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access From Clock,
SDRAM Cycle Time,
SDRAM Access From CK,
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
DESCRIPTION
t
t
t
CK CAS Latency = 2.5 (See
CK, CAS Latency = 2
CK, CAS Latency = 1.5
t
AC, CAS Latency = 1.5
t
t
AC, CAS Latency =
AC, CAS Latency = 2
t
RCD
t
RP
t
RRD
15ns (-262/-26A/-265/-202)
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
32
7.5ns (-335/-262/-26A)
20ns (-26A/-265/-202)
20ns (-26A/-265/-202)
Fast/Concurrent AP
ENTRY (VERSION)
10ns (-265/-202)
7ns (-262/-26A)
Registered, PLL
DDR SDRAM
7.5ns (-265)
0.7ns (-335)
0.8ns (-202)
0.7ns (-335)
0.8ns (-202)
18ns (-335)
15ns (-262)
12ns (-335)
15ns (-262)
7.8µs/SELF
6ns (-335)
8ns (-202)
18ns (-335)
SSTL 2.5V
1 clock
11, 12
2, 4, 8
2, 2.5
128
256
ECC
N/A
N/A
12
72
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
0
4
4
4
0
1
184-PIN DDR SDRAM RDIMM
512MB, 1GB (x72, ECC, SR)
MT18VDDF6472
0D
A0
0B
0C
C0
3C
3C
3C
80
08
07
01
48
00
04
60
70
75
80
70
75
80
02
82
04
04
01
0E
04
01
02
26
75
70
75
80
00
00
48
50
30
48
50
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDF12872
0D
A0
80
08
0C
01
48
00
04
60
70
75
80
70
75
80
02
82
04
04
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
3C
50
30
3C
48
3C
50
07