MT18VDDF12872DY-40BD3 Micron Technology Inc, MT18VDDF12872DY-40BD3 Datasheet - Page 33

• Manufacturer Part Number: MT18VDDF12872DY-40BD3
• Description: MODULE DDR 1GB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872DY-40BD3

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Operating Current: 1.8A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 23: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 34
pdf: 09005aef8074e85b, source: 09005aef8072fe49
DDF18C64_128x72G.fm - Rev. C 11/04 EN
BYTE
36-40 Reserved
46-61 Reserved
48-61 Reserved
65-71 Manufacturer’s JEDEC IDCode
73-90 Module Part Number (ASCII)
30
31
32
33
34
35
41
42
43
44
45
47
62
63
64
72
91
92
Minimum RAS# Pulse Width,
Module Rank Density
Address and Command Setup Time,
4)
Address and Command Hold Time,
4)
Data/Data Mask Input Setup Time,
Data/Data Mask Input Hold Time,
Min Active Auto Refresh Time,
Minimum Auto Refresh to Active/Auto Refresh
Command Period,
SDRAM Device Max Cycle Time,
SDRAM Device Max DQS-DQ Skew Time,
SDRAM Device Max Read Data Hold Skew Factor,
t
DIMM Height
SPD Revision
Checksum for Bytes 0–62
Manufacturer’s JEDEC ID Code
Manufacturing Location
PCB Identification Code
Identification Code (Continued)
QHS
DESCRIPTION
t
RFC
t
RAS, (See note 3)
t
RC
t
CK
t
DH
t
t
MAX
DS
t
IH, (See note
IS, (See note
t
DQSQ
13ns (-262/-26A/-265/-202)
33
1.0ns (-262/-26A/-265)
1.0ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.5ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
45ns (-262/-26A/-265)
75ns (-262/-26A/-265)
ENTRY (VERSION)
65ns (-26A/-265)
256MB, 512MB
60ns (335/-262)
0.45ns (-335)
0.45ns (-335)
0.45ns (-335)
0.55ns (-335)
(Continued)
0.8ns (-335)
1.1ns (-202)
0.8ns (-335)
1.1ns (-202)
0.6ns (-202)
0.6ns (-202)
0.6ns (-202)
1.0ns (-202)
Low-profile
42ns (-335)
40ns (-202)
70ns (-202)
72ns (-335)
80ns (-202)
12ns (-335)
Release 1.0
MICRON
01–12
-26A
-335
-262
-265
-202
1-9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0
184-PIN DDR SDRAM RDIMM
512MB, 1GB (x72, ECC, SR)
MT18VDDF6472
Variable Data
01–0C
01-09
2A
2D
A0
A0
A0
B0
B0
3C
4B
3C
0B
2C
28
80
80
80
45
50
60
45
50
60
00
41
46
48
50
30
34
28
32
50
75
00
01
00
10
6E
38
68
03
00
FF
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDF12872
Variable Data
01–0C
01-09
2A
2D
A0
A0
A0
8D
BA
EA
28
01
80
B0
80
B0
45
50
60
45
50
60
00
3C
41
46
48
4B
50
30
34
28
32
3C
50
75
00
01
00
10
85
2C
00
F0
FF