MT5VDDT1672HG-26AC3 Micron Technology Inc, MT5VDDT1672HG-26AC3 Datasheet - Page 7

MODULE SDRAM DDR 128MB 200SODIMM

MT5VDDT1672HG-26AC3

Manufacturer Part Number
MT5VDDT1672HG-26AC3
Description
MODULE SDRAM DDR 128MB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT5VDDT1672HG-26AC3

Memory Type
DDR SDRAM
Memory Size
128MB
Speed
266MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
16Mx72
Total Density
128MByte
Access Time (max)
75ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
925mA
Number Of Elements
5
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 7:
Input Capacitance
PDF: 09005aef80a8e793/Source: 09005aef80a8e767
dd5c16_32x72h.fm - Rev. F 2/07 EN
Symbol
V
V
V
IH
V
IL
V
I
I
I
I
I
T
OH
OH
REF
OZ
OL
OL
DD
(
I
TT
(
A
I
DC
DC
)
)
Parameter/Condition
V
I/O reference voltage
I/O termination voltage (system)
Input high (logic 1) voltage
Input low (logic 0) voltage
Input leakage current; Any input
0V ≤ V
(All other pins not under test = 0V)
Output leakage current
(DQ pins are disabled; 0V ≤ V
Output levels
High current (V
Low current (V
Output levels (reduced drive option)
High current (V
Low current (V
Module ambient operating temperature
Absolute Maximum Ratings
DD
supply voltage relative to V
IN
≤ V
DD
; V
OUT
OUT
OUT
OUT
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions above those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations. JEDEC modules are currently designed using
simulations to close timing budgets.
REF
= V
= V
= 0.373V, MAX V
= 0.373V, MAX V
pin 0V ≤ V
DD
DD
Q - 0.373V, MIN V
Q - 0.373V, MIN V
OUT
IN
SS
≤ 1.35V
≤ V
REF
REF
DD
128MB, 256MB: (x72, ECC, SR) 200-Pin DDR SODIMM
, MAX V
, MAX V
Q)
REF
REF
, MIN V
, MIN V
TT
TT
7
Command/address,
RAS#, CAS#, WE#,
CKE, S#, BA
CK0, CK0#,
CK1, CK1#
DM, CK2, CK2#
DQ, DQS
)
)
Commercial
Industrial
TT
TT
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.49 × V
V
V
REF
REF
–16.8
Min
–0.3
16.8
Electrical Specifications
–10
–40
2.3
–4
–2
–5
–9
+ 0.15
9
0
- 0.04
DD
©2004 Micron Technology, Inc. All rights reserved.
Q
0.51 × V
V
V
V
REF
REF
DD
Max
+70
+85
2.7
10
+ 0.04
4
2
5
- 0.15
+ 0.3
DD
Q
Units
mA
mA
mA
mA
µA
µA
°C
V
V
V
V
V

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