MT16HTF12864AY-53ED4 Micron Technology Inc, MT16HTF12864AY-53ED4 Datasheet - Page 15

• Manufacturer Part Number: MT16HTF12864AY-53ED4
• Description: MODULE DDR2 1GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53ED4

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.216A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 11:
Table 12:
Figure 7:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Select Code
Mode
Memory area select code (two arrays)
Protection register select code
Current address READ
Random address READ
Sequential READ
Byte WRITE
Page WRITE
SDA Out
SDA In
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t
SU:STA
t
F
RW Bit
1
0
1
1
0
0
t
HD:STA
t
t AA
LOW
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
t
t
HIGH
b7
HD:DAT
IL
IL
IL
IL
1
0
Device Type Identifier
Bytes
≤ 16
15
≥ 1
1
1
1
1
b6
0
1
t
DH
t
Initial Sequence
Start, device select, RW = 1
Start, device select, RW = 0, address
Restart, device select, RW = 1
Similar to current or random address READ
Start, device select, RW = 0
Start, device select, RW = 0
R
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b5
1
1
t
SU:DAT
b4
0
0
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
©2003 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t
SU:STO
t
BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0