MT16HTF12864AY-53ED4 Micron Technology Inc, MT16HTF12864AY-53ED4 Datasheet - Page 8

• Manufacturer Part Number: MT16HTF12864AY-53ED4
• Description: MODULE DDR2 1GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53ED4

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.216A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 6:
Capacitance
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Parameter
V
V
V
Voltage on any pin relative to V
Storage temperature
DDR2 SDRAM device operating temperature (ambient)
Operating temperature (ambient)
Input leakage current; Any input 0V ≤ V
V
(All other pins not under test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
DD
DD
DD
REF
REF
Q supply voltage relative to V
L supply voltage relative to Vss
supply voltage relative to V
input 0V ≤ V
leakage current; V
Absolute Maximum Ratings
IN
Notes:
≤0.95V;
REF
=
Stresses greater than those listed in Table 6 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. S# is defined to be S0# and S1#. CKE includes both CKE0 and CKE1.
2. V
At DDR2 data rates, Micron encourages designers to simulate the performance of the
module to achieve optimum values. When inductance and delay parameters associated
with trace lengths are used in simulations, they are significantly more accurate and real-
istic than a gross estimation of module capacitance. Simulations can then render a
considerably more accurate result. JEDEC modules are now designed by using simula-
tions to close timing budgets.
V
alid V
brought directy to a DIMM pin.
OUT
SS
SS
DD
SS
L is the power supply for the DDR2 devices’ DLL; however, this power supply is not
≤ V
REF
DD
level
IN
Q; DQ and
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
≤ V
DD
;
Command/address,
RAS#, CAS#, WE#
S#, CKE
CK0, CK0#
CK1, CK1#, CK2, CK2#
DM
DQ, DQS, DQS#
8
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
Symbol
IN
V
V
T
V
T
DD
T
DD
, V
case
I
STG
OPR
DD
OZ
–
I
I
L
OUT
Q
2
Electrical Specifications
Min
–1.0
–0.5
–0.5
–0.5
©2003 Micron Technology, Inc. All rights reserved.
–55
–80
–40
–20
–30
–10
–10
–32
0
0
Max
100
2.3
2.3
2.3
2.3
85
55
80
40
20
30
10
10
32
Units
µA
µA
µA
°C
°C
°C
V
V
V
V