MT16HTF12864AY-53ED4 Micron Technology Inc, MT16HTF12864AY-53ED4 Datasheet - Page 2

• Manufacturer Part Number: MT16HTF12864AY-53ED4
• Description: MODULE DDR2 1GB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864AY-53ED4

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 533MT/s
• Package / Case: 240-DIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240UDIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 50ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.216A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 1:
Table 2:
Table 3:
PDF: 09005aef80f09084/Source: 09005aef80f09068
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
Refresh count
Row addressing
Device bank addressing
Device page size per bank
Device configuration
Column addressing
Module rank addressing
Part Number
MT16HTF6464AY-667__
MT16HTF6464AY-53E__
MT16HTF6464AY-40E__
MT16HTF12864AY-80E__
MT16HTF12864AY-667__
MT16HTF12864AY-53E__
MT16HTF12864AY-40E__
MT16HTF25664AY-80E__
MT16HTF25664AY-667__
MT16HTF25664AY-53E__
MT16HTF25664AY-40E__
Speed Grade
-80E
-667
-53E
-40E
Address Table
Key Timing Parameters
Part Numbers and Timing Parameters
1
Notes:
CL = 3
400
400
400
1. All part numbers end with a two-place code (not shown), designating component and PCB
–
Module
Density
revisions. Consult factory for current revision codes. Example: MT16HTF12864AY-80ED4.
512MB
512MB
512MB
1GB
1GB
1GB
1GB
2GB
2GB
2GB
2GB
Data Rate (MT/s)
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
CL = 4
Configuration
533
533
533
400
256Mb (32 Meg x 8)
128 Meg x 64
128 Meg x 64
128 Meg x 64
128 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
256 Meg x 64
64 Meg x 64
64 Meg x 64
64 Meg x 64
8K (A0–A12)
4 (BA0, BA1)
2 (S0#, S1#)
1K (A0–A9)
512MB
1KB
8K
2
CL = 5
800
667
–
–
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
6.4 GB/s
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb (64 Meg x 8)
16K (A0–A13)
4 (BA0, BA1)
1K (A0–A9)
2 (S0#, S1#)
t
(ns)
12.5
RCD
15
15
15
1GB
1KB
8K
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
2.5ns/800 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
©2003 Micron Technology, Inc. All rights reserved.
(ns)
12.5
t
15
15
15
RP
1Gb (128 Meg x 8)
8 (BA0, BA1, BA2)
16K (A0–A13)
2 (S0#, S1#)
1K (A0–A9)
(CL-
2GB
1KB
8K
Latency
t
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
5-5-5
5-5-5
4-4-4
3-3-3
Features
RCD-
(ns)
t
55
55
55
55
RC
t
RP)