LM3205TLEV National Semiconductor, LM3205TLEV Datasheet - Page 5

• Manufacturer Part Number: LM3205TLEV
• Description: BOARD EVALUATION LM3205TL
• Manufacturer: National Semiconductor
• Series: PowerWise®r

Specifications of LM3205TLEV

• Main Purpose: DC/DC, Step Down
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: 0.8 ~ 3.6V
• Current - Output: 650mA
• Voltage - Input: 2.7 ~ 5.5V
• Regulator Topology: Buck
• Frequency - Switching: 2MHz
• Board Type: Fully Populated
• Utilized Ic / Part: LM3205
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Power - Output: -

T
C
Linearity
I
T
η
V
Line_tr
Load_tr
PSRR
CON
RESPONSE
ON
OUT
CON
Symbol
System Characteristics
values in the typical application circuit are used. These parameters are not guaranteed by production testing. Min and Max
limits apply over the full operating ambient temperature range (−30°C
25°C, PV
C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation
of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions,
see the Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pins. The LM3205 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO)
circuitry. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
= 130°C (typ.).
Note 4: The Human body model is a 100pF capacitor discharged through a 1.5kΩ resistor into each pin. (MIL-STD-883 3015.7) The machine model is a 200pF
capacitor discharged directly into each pin.
Note 5: In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be de-
rated. Maximum ambient temperature (T
of the device in the application (P
equation: T
Note 6: microSMD:Junction-to-ambient thermal resistance (θ
in the JEDEC standard JESD51-7. A 4 layer, 4" x 4", 2/1/1/2 oz. Cu board as per JEDEC standards is used for the measurements.
LLP: The value of (θ
In applications where high maximum power dissipation exits (high V
on these topics for LLP, refer to Application Note 1187: Leadless Leadframe Package (LLP) and the Power Efficiency and Power Dissipation section of
this datasheet
Note 7: Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm.
Due to the pulsed nature of the testing T
Note 8: The parameters in the electrical characteristics table are tested under open loop conditions at PV
range and closed loop results refer to the datasheet curves.
Note 9: Shutdown current includes leakage current of PFET.
Note 10: I
Note 11: Current limit is built-in, fixed, and not adjustable. Refer to datasheet curves for closed loop data and its variation with regards to supply voltage and
temperature. Electrical Characteristic table reflects open loop data (FB = 0V and current drawn from SW pin ramped up until cycle by cycle limit is activated).
Closed loop current limit is the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.
OUT
_ripple Ripple voltage, PWM mode
= 4.7µF, 0603, 6.3V for LM3205TL/LM3205SD unless otherwise noted.
Q
A-MAX
IN
specified here is when the part is operating at 100% duty cycle.
Time for V
to 3.6V
Time for V
0.8V
V
Linearity in control
range 0.32V to 1.44V
Control pin input current
Turn on time
(time for output to reach 3.6V
from Enable low to high
transition)
Efficiency
(L = 3.3µH, DCR
Line transient response
Load transient response
V
100mA
= V
CON
IN
= T
DD
= 3.6V, V
J-MAX-OP
JA
input capacitance
= EN = 3.6V, L = 3.3µH, DCR of L
) in LLP-10 could fall in a range of 50°C/W to 150°C/W (if not wider), depending on PWB material, layout, and environmental conditions.
OUT
Parameter
OUT
– (θ
OUT
to fall from 3.6V to
to rise from 0.8V
JA
D-MAX
× P
= 0.8V, I
≤
100mΩ)
), and the junction-to ambient thermal resistance of the part/package in the application (θ
D-MAX
A-MAX
A
= T
).
) is dependent on the maximum operating junction temperature (T
J
OUT
for the electrical characteristics table.
=
The following spec table entries are guaranteed by design providing the component
V
R
V
R
V
Test frequency = 100 kHz
V
Monotonic in nature
EN = Low to High, V
C
V
V
V
10mA to 400mA (Note 12)
V
T
100mA
V
up to 100mA, T
sine wave perturbation
frequency = 10kHz, amplitude = 100mVp-
p
RISE
IN
IN
CON
IN
IN
IN
IN
IN
IN
LOAD
LOAD
OUT
= 3.1/3.6/4.5V, V
= 4.2V, C
= 4.2V, C
= 3.9V
= 3.6V, V
= 4.2V, V
= 3V to 4.5V, V
= 600mV perturbance,
JA
= 1V,
= 4.7µF, I
= T
= 5.5Ω
= 10Ω
) is taken from thermal measurements, performed under the conditions and guidelines set forth
≤
FALL
IN
100mΩ, C
, high I
OUT
OUT
OUT
OUT
= 10µs, V
Conditions
OUT
RISE
= 0.8V, I
= 3.4V, I
= 4.7µF, L = 3.3µH,
= 4.7µF, L = 3.3µH,
OUT
5
OUT
≤
= T
OUT
IN
IN
), special care must be paid to thermal dissipation areas. For more information
1mA
= 10µF, 0603, 6.3V (4.7µF||4.7µF, 0603, 6.3V can be used),
= 4.2V, V
= 0.8V, I
OUT
FALL
= 0.8V, transients
≤
OUT
OUT
T
= 0.8V, I
= 10µs
A
= 90mA
= 400mA
≤
OUT
O
85°C) and over the V
= 3.6V,
=
OUT
IN
=
= V
J-MAX-OP
DD
Min
-10
-3
= 3.6V. For performance over the input voltage
= 125°C), the maximum power dissipation
J
IN
= 150°C (typ.) and disengages at T
Typ
range = 2.7V to 5.5V, T
20
20
70
83
96
10
50
50
40
JA
), as given by the following
Max
100
+3
30
30
20
10
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mVp-p
mVpk
mVpk
Units
µA
dB
µs
µs
pF
µs
%
%
%
A
=
J