LM3205TLEV National Semiconductor, LM3205TLEV Datasheet

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LM3205TLEV

Manufacturer Part Number
LM3205TLEV
Description
BOARD EVALUATION LM3205TL
Manufacturer
National Semiconductor
Series
PowerWise®r
Datasheets

Specifications of LM3205TLEV

Main Purpose
DC/DC, Step Down
Outputs And Type
1, Non-Isolated
Voltage - Output
0.8 ~ 3.6V
Current - Output
650mA
Voltage - Input
2.7 ~ 5.5V
Regulator Topology
Buck
Frequency - Switching
2MHz
Board Type
Fully Populated
Utilized Ic / Part
LM3205
Lead Free Status / RoHS Status
Not applicable / Not applicable
Power - Output
-
© 2009 National Semiconductor Corporation
650mA Miniature, Adjustable, Step-Down DC-DC Converter
for RF Power Amplifiers
General Description
The LM3205 is a DC-DC converter optimized for powering RF
power amplifiers (PAs) from a single Lithium-Ion cell, however
they may be used in many other applications. It steps down
an input voltage from 2.7V to 5.5V to a variable output voltage
from 0.8V(typ.) to 3.6V(typ.). Output voltage is set using a
V
of the RF PA.
The LM3205 offers superior performance for mobile phones
and similar RF PA applications. Fixed-frequency PWM oper-
ation minimizes RF interference. Shutdown function turns the
device off and reduces battery consumption to 0.01 µA (typ.).
The LM3205 is available in micro SMD package and LLP
package. For all other package options contact your local
NSC sales office.
A high switching frequency (2 MHz) allows use of tiny surface-
mount components. Only three small external surface-mount
components, an inductor and two ceramic capacitors are re-
quired.
Typical Application
CON
analog input for controlling power levels and efficiency
201580
FIGURE 1. LM3205 Typical Application
LM3205
Features
Packages
Applications
2 MHz (typ.) PWM Switching Frequency
Operates from a single Li-Ion cell (2.7V to 5.5V)
Variable Output Voltage (0.8V to 3.6V)
Fast Output Voltage Transient (0.8V to 3.6V in 20µs)
650mA Maximum load capability
High Efficiency (96% Typ at 4.2V
from internal synchronous rectification
Current Overload Protection
Thermal Overload Protection
8-Pin microSMD (Lead Free)
10-Pin LLP
Cellular Phones
Hand-Held Radios
RF PC Cards
Battery Powered RF Devices
IN
, 3.4V
20158001
OUT
www.national.com
May 27, 2009
at 400mA)

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LM3205TLEV Summary of contents

Page 1

... NSC sales office. A high switching frequency (2 MHz) allows use of tiny surface- mount components. Only three small external surface-mount components, an inductor and two ceramic capacitors are re- quired. Typical Application © 2009 National Semiconductor Corporation LM3205 Features ■ 2 MHz (typ.) PWM Switching Frequency ■ ...

Page 2

Connection Diagrams Order Information microSMD Order Number LM3205TL LM3205TLX Note: The actual physical placement of the package marking will vary from part to part. The package marking “X” designates the date code. “T” NSC internal code for die ...

Page 3

Pin Descriptions Pin # Name microSMD LLP CON SGND PGND Description Power Supply Voltage ...

Page 4

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications SGND DD IN PGND to SGND EN, FB, V CON Continuous Power Dissipation  (Note 3) Junction Temperature (T ) J-MAX Storage Temperature Range Electrical Characteristics boldface type apply over the full operating ambient temperature range (−30°C ...

Page 5

System Characteristics values in the typical application circuit are used. These parameters are not guaranteed by production testing. Min and Max limits apply over the full operating ambient temperature range (−30°C 25° 3.6V, L ...

Page 6

... Note 12: Ripple voltage should measured at C Note 13: National Semiconductor recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper ESD handling techniques can result in damage. Typical Performance Characteristics ≤ L 100mΩ 10uF, 0603, 6.3V ( 4.7uF||4.7uF, 0603, 6.3V can be used), C ...

Page 7

Output Voltage vs Temperature (V = 3.6V 0.8V) IN OUT Open/Closed Loop Current Limit vs Temperature (PWM mode) Efficiency vs Output Voltage (V = 3.9V) IN Output Voltage vs Temperature (V IN 20158059 V Voltage vs Output Voltage ...

Page 8

Efficiency vs Output Current (V = 3.4V) OUT Load Transient Response (V = 4.2V OUT Startup (V = 4.2V 3.4V OUT www.national.com 20158065 = 3.4V) 20158017 = 5kΩ) LOAD 20158085 8 Load Transient Response ...

Page 9

Line Transient Response (V = 3.0V to 3.6V 100mA) IN OUT V and Load Transient CON (V = 4.2V 0.32V/1.44V, 15Ω/8Ω, same time) IN CON Output Voltage Ripple (V = 1.3V) OUT V Voltage Response CON ...

Page 10

Output Voltage Ripple in Pulse Skip (V = 3.64V 3.4V OUT R vs Temperature (microSMD) DSON (N-ch -200mA) SW www.national.com R DSON = 5Ω) LOAD 20158025 20158077 10 vs Temperature (microSMD) (P-ch ...

Page 11

Block Diagram Operation Description The LM3205 is a simple, step-down DC-DC converter opti- mized for powering RF power amplifiers (PAs) in mobile phones, portable communicators, and similar battery pow- ered RF devices designed to allow the RF PA ...

Page 12

Circuit Operation Referring to Figure 1 and Figure 2, the LM3205 operates as follows. During the first part of each switching cycle, the con- trol block in the LM3205 turns on the internal PFET (P- channel MOSFET) switch. This allows ...

Page 13

The synchronous rectifier is off in timed current limit mode. Timed current limit prevents the loss of current control seen in some products when the output voltage is ...

Page 14

... LLP PACKAGE ASSEMBLY AND USE Use of the LLP package requires specialized board layout, precision mounting and careful re-flow techniques, as de- tailed in National Semiconductor Application Note 1187. Re- fer to the section Surface Mount Technology (SMT) Assembly Recommendations. For best results in assembly, alignment ordinals on the PC board should be used to facilitate place- ment of the device and must attach to the DAP(Die Attach Pad) of the LLP package ...

Page 15

Board Layout Considerations The LM3205 converts higher input voltage to lower output voltage with high efficiency. This is achieved with an inductor- based switching topology. During the first half of the switching cycle, the internal PMOS switch turns on, the ...

Page 16

Connect C1(-), C2(-) and PGND with wide GND pattern. This pattern should be short, so C1(-), C2(-), and PGND should be as close as possible. Then connect to a PCB common GND pattern with as many via-holes as possible. ...

Page 17

Physical Dimensions inches (millimeters) unless otherwise noted 8-Bump Thin Micro SMD, Large Bump X1 = 1.666mm ± 0.030mm X2 = 1.819mm ±0.030mm X3 = 0.600mm ±0.075mm NS Package Number TLA08GNA 10-Pin LLP NS Package Number SDA10A 17 www.national.com ...

Page 18

... For more National Semiconductor product information and proven design tools, visit the following Web sites at: Products Amplifiers www.national.com/amplifiers Audio www.national.com/audio Clock and Timing www.national.com/timing Data Converters www.national.com/adc Interface www.national.com/interface LVDS www.national.com/lvds Power Management www.national.com/power Switching Regulators www.national.com/switchers LDOs www.national.com/ldo LED Lighting www ...

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