PIC18F1320-E/P Microchip Technology, PIC18F1320-E/P Datasheet - Page 10
![IC MCU FLASH 4KX16 EEPROM 18DIP](/photos/6/76/67657/18-dip_300mil__sml.jpg)
PIC18F1320-E/P
Manufacturer Part Number
PIC18F1320-E/P
Description
IC MCU FLASH 4KX16 EEPROM 18DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F1220-ISO.pdf
(308 pages)
3.PIC18F1220-ISO.pdf
(8 pages)
4.PIC18F1220-ISO.pdf
(6 pages)
5.PIC18F1220-ISO.pdf
(10 pages)
6.PIC18F1220-ISO.pdf
(4 pages)
7.PIC18F1320-ISS.pdf
(36 pages)
8.PIC18F1220-EP.pdf
(310 pages)
Specifications of PIC18F1320-E/P
Program Memory Type
FLASH
Program Memory Size
8KB (4K x 16)
Package / Case
18-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
16
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
16
Number Of Timers
4
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM163014, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
7-ch x 10-bit
Package
18PDIP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DVA18XP180 - DEVICE ADAPTER 18F1320 PDIP 18LDACICE0202 - ADAPTER MPLABICE 18P 300 MIL
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
PIC18FX220/X320
3.0
3.1
The term “Blank Check” means to verify that the device
has no programmed memory cells. All memories must
be verified: code memory, data EEPROM, ID locations
and Configuration bits. The Device ID registers
(3FFFFEh:3FFFFFh) should be ignored.
A “blank” or “erased” memory cell will read as ‘1’.
So, “Blank Checking” a device merely means to
verify that all bytes read as FFh except the
Configuration bits. Unused (reserved) Configuration
bits will read as ‘0’ (programmed). Refer to Table 5-2
for blank configuration expected data for the various
devices.
If it is determined that the device is not blank, then the
device should be Bulk Erased (see Section 3.2 “High-
Voltage ICSP Bulk Erase”) before any attempt to
program is made.
Given that “Blank Checking” is merely code and data
EEPROM verification, with FFh as the expected data,
refer to Section 4.1 “Read Data EEPROM Memory”
and Section 4.3 “Verify Code Memory and ID
Locations” for implementation details.
FIGURE 3-1:
DS39592F-page 10
Blank Check Device
Blank Check Device
DEVICE PROGRAMMING
Blank Check
Bulk Erase Device
device
blank?
blank?
device
Abort
Start
Is
Is
No
No
BLANK CHECK FLOW
Yes
Yes
Continue
Continue
3.2
Erasing code or data EEPROM is accomplished by
writing an “erase option” to address 3C0004h. Code
memory may be erased, portions at a time, or the user
may erase the entire device in one action. “Bulk Erase”
operations will also clear any code-protect settings
associated with the memory block erased. Erase
options are detailed in Table 3-1.
TABLE 3-1:
The actual Bulk Erase function is a self-timed
operation. Once the erase has started (falling edge of
the 4th PGC after the write command), serial execution
will cease until the erase completes (parameter P11).
During this time, PGC may continue to toggle, but PGD
must be held low.
The code sequence to erase the entire device is shown
in Table 3-2 and the flowchart is shown in Figure 3-2.
TABLE 3-2:
Chip Erase
Erase Data EEPROM
Erase Boot Block
Erase Block 0
Erase Block 1
Erase Block 2
Erase Block 3
Command
Note:
0000
0000
0000
0000
0000
0000
1100
0000
0000
4-Bit
High-Voltage ICSP Bulk Erase
A Bulk Erase is the only way to reprogram
code-protect bits from an ON state to an
OFF state.
Payload
Description
0E 3C
6E F8
0E 00
6E F7
0E 04
6E F6
00 80
00 00
00 00
Data
BULK ERASE OPTIONS
BULK ERASE COMMAND
SEQUENCE
MOVLW 3Ch
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 04h
MOVWF TBLPTRL
Write 80h TO 3C0004h to
erase entire device.
NOP
Hold PGD low until
erase completes.
2010 Microchip Technology Inc.
Core Instruction
Data
83h
88h
89h
8Ah
8Bh
80h
81h