M30262F6GP#U3 Renesas Electronics America, M30262F6GP#U3 Datasheet - Page 23

• Manufacturer Part Number: M30262F6GP#U3
• Description: IC M16C/TINY MCU FLASH 48LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/Tiny/26r

Specifications of M30262F6GP#U3

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 38
• Program Memory Size: 48KB (48K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

M16C/26 Group
Rev.1.00
REJ09B0176-0100Z
5.4 Flash Memory Version Electrical Characteristics
Table 16.4. Flash Memory Version Electrical Characteristics (Note 1) 100E/W cycle products (D3, D5, U3, U5))
Table 16.5. Flash Memory Version Electrical Characteristics (Note 6) 10000 E/W cycle products (D7, D9, U7, U9)
Table 16.6. Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
Note 1: When not otherwise specified, Vcc = 2.7 to5.5V; Topr = 0 to 60 °C.
Note 2: VCC = 5V; TOPR = 25 °C.
Note 3: Definition of E/W cycle: Each block may be written to a variable number of times - up to a maximum of the total
Note 4: Maximum number of E/W cycles for which opration is guaranteed.
Note 5: Topr = 55°C.
Note 6: When not otherwise specified, Vcc = 2.7 to 5.5V; Topr = -40 to 85°C (D7, U7) / -20 to 85°C (D9, U9).
Note 7: Table18.5 applies for Block A or B E/W cycles > 1000. Otherwise, use Table 18.4.
Note 8: To reduce the number of E/W cycles, a block erase should ideally be performed after writing as many different
Note 9: Should erase error occur during block erase, attempt to execute clear status register command, then clock erase
Note 10: When Block A or B E/W cycles exceed 100 (D7, D9, U7, U9), select one wait state per block access. When FMR
Note 11: Customers desiring E/W failure rate information should contact their Renesas technical support representative.
t d ( S R - E S )
td(SR-ES) T i m e d e l a y f r o m S u s p e n d R e q u e s t u n t i l E r a s e S u s p e n d
S y m b o l
S y m b o l
Flash program, erase voltage
V
CC
–
–
–
–
–
–
–
= 2.7 V to 5.5 V
2004.6.10
17 is set to "1", one wait state is inserted per access to Block A or B - regardless of the value of PM17. Wait state
setting of FMR17.
number of distinct word addresses - for every block erase. Performing multiple writes to the same address before
an erase operation is prohibited.
word addresses (only one time each) as possible. It is important to track the total number of block erases.
command at least three times until erase error disappears.
insertion during access to all other blocks, as well as to internal RAM, is controlled by PM17 - regardless of the
E r a s e / W r i t e c y c l e ( N o t e 3 )
W o r d p r o g r a m t i m e ( V c c = 5 . 0 V , T o p r = 2 5 ° C )
Block erase time
T i m e d e l a y f r o m S u s p e n d R e q u e s t u n t i l E r a s e S u s p e n d
Data retention time (Note 5)
Erase/Write cycle (Note 3, 8, 9)
W o r d p r o g r a m t i m e ( V c c = 5 . 0 V , T o p r = 2 5 ° C )
B l o c k e r a s e t i m e ( V c c = 5 . 0 V , T o p r = 2 5 ° C )
(interrupt request)
Erase suspend
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FMR46
request
P a r a m e t e r
P a r a m e t e r
1 6K b y t e b l o c k
3 2 K b y t e b l o c k
( 2 K b y t e b l o c k )
2 K b y t e b l o c k
8K b y t e b l o c k
V
Flash read operation voltage
CC
=2.7 to 5.5 V
td(SR-ES)
10000
1 0 0 ( N o t e 4 )
M i n .
Min.
(Note 4,10)
[blockA and block B(Note 7)]
20
5. Electrical Characteristics (V
Standard
Standard
( N o t e 2 )
( N o t e 2 )
T y p .
T y p .
100
0.2
0 . 4
0.7
1 . 2
0 . 3
75
(at Topr = 0 to 60
M a x
M a x
60 0
9
9
9
9
8
8
o
C)
c y c l e
c y c l e
U n i t
Unit
y e a r
m s
ms
µ s
µs
CC
s
s
s
s
s
=5V)