TWR-56F8257 Freescale Semiconductor, TWR-56F8257 Datasheet - Page 50

• Manufacturer Part Number: TWR-56F8257
• Description: TOWER SYSTEM KIT MC56F8257
• Manufacturer: Freescale Semiconductor
• Type: DSC, Digital Signal Controllerr

Specifications of TWR-56F8257

• Contents: Board, Cables, Documentation, DVD
• For Use With/related Products: Freescale Tower System, MC56F8257
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications
7.3
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits, use
normal handling precautions to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing conforms with AEC-Q100 Stress Test Qualification. During device qualification, ESD stresses are performed
for the human body model (HBM), the machine model (MM), and the charge device model (CDM).
All latch-up testing conforms with AEC-Q100 Stress Test Qualification.
A device is defined as a failure if, after exposure to ESD pulses, the device no longer meets the device specification.
Comprehensive DC parametric and functional testing is performed according to the applicable device specification at room
temperature and then at hot temperature, unless specified otherwise in the device specification.
7.4
This section provides information about operating temperature range, power dissipation, and package thermal resistance. Power
dissipation on I/O pins is usually small compared to power dissipation in on-chip logic and voltage regulator circuits, and it is
user-determined rather than being controlled by the device design. To account for P
difference between actual pin voltage and V
unusually high pin current (heavy loads), the difference between pin voltage and V
50
ESD Protection and Latch-up Immunity
Thermal Characteristics
1
ESD for Human Body Model (HBM)
ESD for Machine Model (MM)
ESD for Charge Device Model (CDM)
Latch-up current at T
Parameter is achieved by design characterization on a small sample size from typical devices under
typical conditions, unless otherwise noted
Junction to package top
Junction to ambient
Junction to ambient
Junction to ambient
Junction to ambient
Natural convection
Natural convection
Junction to board
Junction to case
Characteristic
(@200 ft/min)
(@200 ft/min)
Characteristic
Table 18. MC56F825x/MC56F824x ESD/Latch-up Protection
Table 19. 44LQFP Package Thermal Characteristics
A
MC56F825x/MC56F824x Digital Signal Controller, Rev. 3
= 85
o
1
C (I
SS
LAT
or V
)
Natural convection
Single layer board
Single layer board
Four layer board
Four layer board
DD
Comments
(2s2p)
(2s2p)
and multiply by the pin current for each I/O pin. Except in cases of
(1s)
(1s)
2000
Min
200
750
100
Symbol
R
R
R
R
R
R
Typ
JMA
JMA
JMA
JT
—
—
—
JC
JA
JB
SS
I/O
or V
in power calculations, determine the
(LQFP)
Value
Max
DD
—
—
—
70
48
57
42
30
13
2
is very small.
Freescale Semiconductor
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mA
V
V
V