PC28F640P33B85A NUMONYX, PC28F640P33B85A Datasheet - Page 34

• Manufacturer Part Number: PC28F640P33B85A
• Description: IC FLASH 64MBIT 85NS 64EZBGA
• Manufacturer: NUMONYX
• Series: StrataFlash™r

Specifications of PC28F640P33B85A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (4M x 16)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Cell Type: NOR
• Density: 64Mb
• Access Time (max): 85ns
• Interface Type: Parallel/Serial
• Boot Type: Bottom
• Address Bus: 22b
• Operating Supply Voltage (typ): 2.5/3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 4M
• Supply Current: 28mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 888226; 888226; PC28F640P33B85; PC28F640P33B85 888226

Figure 17: Asynchronous Page-Mode Read Timing
Note:
Figure 18: Synchronous Single-Word Array or Non-array Read Timing
1.
2.
Datasheet
34
A[Max:2] [A]
DATA [D/Q]
WAIT [T]
OE# [G]
CE# [E]
A[1:0]
WAIT shown deasserted during asynchronous read mode (RCR 10=0, WAIT asserted low).
WAIT is driven per OE# assertion during synchronous array or non-array read, and can be configured to assert either
during or one data cycle before valid data.
This diagram illustrates the case in which an n-word burst is initiated to the flash memory array and it is terminated by
CE# deassertion after the first word in the burst.
ADV#
Address [A]
Data [D/Q]
ADV# [V]
WAIT [T]
OE# [G]
CLK [C]
CE# [E]
R105
R105
R105
R105
R101
R15
R3
R301
R303
R2
R7
R104
R104
R101
R102
R4
R106
R15
R306
R106
R7
R2
R3
R108
R4
R1
R1
Numonyx™ StrataFlash
R307
R304
R305
R312
R9
®
R17
R8
Embedded Memory (P33)
Order Number: 314749-05
November 2007
R9
R17
R10
R8