BLF6G22LS-180RN:11 NXP Semiconductors, BLF6G22LS-180RN:11 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22LS-180RN:11
• Description: BLF6G22LS-180RN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-180RN:11

• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 49A
• Current - Test: 1.4A
• Voltage - Test: 30V
• Power - Output: 40W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934062734118

NXP Semiconductors
8. Test information
BLF6G22-180RN_22LS-180RN_1
Product data sheet
Fig 4.
(dB)
G
p
17
16
15
14
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA power gain and drain
efficiency as function of average load power;
typical values
DS
= 30 V; I
7.4 2-carrier W-CDMA
Dq
20
= 1400 mA; f = 2140 MHz ( 5 MHz);
G
Fig 6.
D
p
input
C1
V
GG
C7
The drawing is not to scale.
Test circuit for operation at 2200 MHz
40
P
C8
L(AV)
R2
001aai644
C6
C5
C4
(W)
Rev. 01 — 20 November 2008
R1
60
60
40
20
0
(%)
D
C3
C2
Fig 5.
ACPR
IMD3
(dBc)
30
35
40
45
50
55
0
V
carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as function of average load power; typical
values
DS
BLF6G22(LS)-180RN
= 30 V; I
Dq
20
= 1400 mA; f = 2140 MHz ( 5 MHz);
C12
C13
C9
ACPR
C17
IMD3
Power LDMOS transistor
C14
V
DD
40
C10
C18
C20
P
C15
L(AV)
© NXP B.V. 2008. All rights reserved.
001aai645
C19
(W)
C11
C16
60
001aai646
output
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