BLF6G22LS-180RN NXP Semiconductors, BLF6G22LS-180RN Datasheet

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz

BLF6G22LS-180RN

Manufacturer Part Number
BLF6G22LS-180RN
Description
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G22LS-180RN
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
CAUTION
1.1 General description
1.2 Features
180 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical RF performance at T
[1]
I
I
I
I
I
I
I
I
Mode of operation
2-carrier W-CDMA
BLF6G22-180RN;
BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01 — 20 November 2008
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 30 V and an I
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Internally matched for ease of use
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
N
N
N
N
N
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 40 W
Power gain = 16.0 dB
Efficiency = 25 %
IMD3 = 38 dBc
ACPR = 42 dBc
Typical performance
f
(MHz)
2110 to 2170
case
= 25 C in a class-AB production test circuit.
Dq
of 1400 mA:
V
(V)
30
DS
P
(W)
40
L(AV)
G
(dB)
16.0
p
(%)
25
D
Product data sheet
IMD3
(dBc)
38
[1]
ACPR
(dBc)
42
[1]

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BLF6G22LS-180RN Summary of contents

Page 1

... BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 — 20 November 2008 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...

Page 2

... Table 2. Pin BLF6G22-180RN (SOT502A BLF6G22LS-180RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22-180RN BLF6G22LS-180RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G22-180RN_22LS-180RN_1 Product data sheet ...

Page 3

... Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G22-180RN and BLF6G22LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G22-180RN_22LS-180RN_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from case ...

Page 4

... NXP Semiconductors 7.2 One-tone CW V Fig 1. One-tone CW power gain and drain efficiency as function of load power; typical values 7.3 Two-tone (dB 1400 mA 2140 MHz Fig 2. Two-tone CW power gain and drain efficiency as function of peak envelope load power; ...

Page 5

... NXP Semiconductors 7.4 2-carrier W-CDMA (dB 1400 mA 2140 MHz ( 5 MHz carrier spacing 10 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as function of average load power; typical values 8. Test information input The drawing is not to scale. ...

Page 6

... NXP Semiconductors C7 C1 The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with and thickness = 0.76 mm. See The drawing is not to scale. Fig 7. Component layout Table 8. List of components (see The Printed-Circuit Board (PCB) used is a double copper-clad Taconic RF35 with Component ...

Page 7

... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 12.83 4.72 0.15 20.02 19.96 mm 3.43 12.57 0.08 19.61 19.66 0.505 0.186 0.006 0.788 0.786 inches 0.135 0.495 0.772 0.774 0.003 OUTLINE VERSION IEC SOT502A Fig 8 ...

Page 8

... NXP Semiconductors Earless flanged LDMOST ceramic package; 2 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 4.72 12.83 20.02 19.96 0.15 mm 12.57 3.43 0.08 19.61 19.66 0.186 0.505 0.788 0.786 0.006 inches 0.135 0.495 0.003 0.772 0.774 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B ...

Page 9

... NXP Semiconductors 10. Abbreviations Table 9. Acronym 3GPP CCDF CDMA CW DPCH EDGE GSM LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G22-180RN_22LS-180RN_1 BLF6G22-180RN_22LS-180RN_1 Product data sheet Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Code Division Multiple Access ...

Page 10

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 11

... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation 7.2 One-tone 7.3 Two-tone 7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 10 Abbreviations ...

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