BLF6G22LS-180PN:11 NXP Semiconductors, BLF6G22LS-180PN:11 Datasheet
BLF6G22LS-180PN:11
Specifications of BLF6G22LS-180PN:11
Related parts for BLF6G22LS-180PN:11
BLF6G22LS-180PN:11 Summary of contents
Page 1
... BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 — 4 March 2010 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
Page 2
... Table 2. Pin BLF6G22-180PN (SOT539A BLF6G22LS-180PN (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22-180PN BLF6G22LS-180PN - BLF6G22-180PN_22LS-180PN_3 Product data sheet Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...
Page 3
... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor Conditions Type = 80 °C; T BLF6G22-180PN case L(AV) BLF6G22LS-180PN Conditions Min 0 144 mA 1.575 1 800 mA 1.725 2.1 ...
Page 4
... Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 1600 mA Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V Fig 1. BLF6G22-180PN_22LS-180PN_3 Product data sheet Application information = 2112.5 MHz ...
Page 5
... NXP Semiconductors (dB 100 1600 mA 2170.1 MHz. 2 Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values (dB 1600 mA MHz; carrier spacing 5 MHz. Fig 4. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values BLF6G22-180PN_22LS-180PN_3 Product data sheet ...
Page 6
... NXP Semiconductors (dB 1600 mA MHz; carrier spacing 10 MHz. Fig 6. 2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values BLF6G22-180PN_22LS-180PN_3 Product data sheet 001aah637 35 η D ACPR, (%) IMD3 30 η (dBc (W) L(AV) = 2157.5 MHz 2167 Fig 7. All information provided in this document is subject to legal disclaimers. ...
Page 7
... NXP Semiconductors 8. Test information input 50 Ω Fig 8. BLF6G22-180PN_22LS-180PN_3 Product data sheet See Table 9 for list of components. Test circuit for operation at 2110 MHz and 2170 MHz All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor ...
Page 8
... NXP Semiconductors INPUT C5 BLF6G22-180PN Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with ε See Table 9 for list of components. Fig 9. Component layout for 2110 MHz and 2170 MHz test circuit Table 9. For test circuit, see Component C1, C3, C5 C2, C8, C16 ...
Page 9
... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.7 11.81 0.18 31.55 31.52 mm 4.2 11.56 30.94 30.96 0.10 0.465 0.185 0.007 1.242 1.241 inches 0.165 0.455 ...
Page 10
... NXP Semiconductors Earless flanged balanced LDMOST ceramic package; 4 leads Dimensions (1) Unit max 4.7 11.81 0.18 31.55 mm nom min 4.2 11.56 0.10 30.94 max 0.185 0.465 0.007 1.242 mm nom min 0.165 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. ...
Page 11
... Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • The status of this document has been changed to “Product data sheet”. ...
Page 12
... Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
Page 13
... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
Page 14
... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 4 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Abbreviations ...