PTFB241402F V1 R250 Infineon Technologies, PTFB241402F V1 R250 Datasheet - Page 12

• Manufacturer Part Number: PTFB241402F V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB241402F V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1200 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37248-4
• Other names: FB241402FV1R25NT

Confidential, Limited Internal Distribution
Package Outline Specifications
Data Sheet
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
2X 4.826±0.510
[.190±0.020]
FLANGE 9.779
[.385]
3.759
[ .148
+0. 010
-0.005
+0.254
-0. 127
Diagram Notes—unless otherwise specified:
SPH 1.575
[.062]
LID 9.398
]
[.370]
2X 45° X 2.720
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 = drains; S = source; G1, G2 = gates.
5. Lead thickness: 0.102 +0.076/–0.025 [0.004+0.003/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
[45° X .107]
S
Package H-37248-4
G1
D1
12 of 13
19.812±0.200
[.780±0.008]
2X 12.700
20.574
[.810]
(8.890
[.350])
[.500]
C
C L
L
D2
G2
H - 37248 - 4 _po _02 - 18- 2010
4X 3.810
[.150]
C
L
4X R0.762
[ R.030
+0. 005
-0.015
-0.380
+0.127
1.016
[.040]
PTFB241402F
]
19.431±0.510
[.765±0.020]
Rev. 04, 2011-04-04