PTFB241402F V1 R250 Infineon Technologies, PTFB241402F V1 R250 Datasheet - Page 4

• Manufacturer Part Number: PTFB241402F V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB241402F V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1200 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37248-4
• Other names: FB241402FV1R25NT

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-10
50
40
30
20
10
0
38
at Selected Frequencies, Single Side
V
2320 MHz
2350 MHz
2380 MHz
DD
39
= 30 V, I
Two-tone Performance
40
Average Output Power (dBm)
DQ
41
= 660 mA, 1 MHz Spacing
42
Efficiency
(cont.)
43
IMD3
44
IMD5
45
46
47
0
-10
-20
-30
-40
-50
-60
4 of 13
25
20
15
10
5
0
24
64 QAM2/3, channel bandwidth = 1.75 MHz,
ƒ = 2.32 GHz
ƒ = 2.35 GHz
ƒ = 2.38 GHz
V
Wimax Performance, Single Side
DD
26
= 30 V, I
Average Output Power (dBm)
Efficiency
28
sample rate = 2 MHz
DQ
30
= 680 mA, modulation =
32
34
EVM
PTFB241402F
36
Rev. 04, 2011-04-04
38
40
-20
-25
-30
-35
-40
-45