PTFB241402F V1 R250 Infineon Technologies, PTFB241402F V1 R250 Datasheet - Page 6

• Manufacturer Part Number: PTFB241402F V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB241402F V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1200 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37248-4
• Other names: FB241402FV1R25NT

Confidential, Limited Internal Distribution
Reference Circuit
This reference circuit is designed to test only one side at a time. This block diagram shows the configuration for testing Side 2.
To test Side 1, move capacitors C807 and C901 to close the circuit to Side 1.
Reference circuit input schematic for ƒ = 2380 MHz
Data Sheet
1000 pF
C805
C804
1000 pF
1200 Ohm
R801
R804
1300 Ohm
V
DD
S6
8
4
In
NC
2
S1
3
1
B
Out
6
NC
7
1
2
3
5
C
S
E
4
RF IN
C803
1000 pF
3000 Ohm
R805
R802
2000 Ohm
TL825
TL816
S2
TL824
TL823
TL842
3
TL835
3
R803
3
10 Ohm
2
1
1
2
TL801
TL820
TL818
TL837
2
2
1
S3
3
3
3
C807
16 pF
TL821
TL841
1
6 of 13
C808
1.2 pF
C806
1.2 pF
TL828
2
1
TL819
3
10000000 pF
C802
TL838
TL804
TL803
TL813
TL843
TL839
TL802
TL840
R807
3000 Ohm
R809
10 Ohm
3
3
2
1
2
1
TL826
2
3
1
TL830
TL808
TL805
TL829
10000000 pF
C801
TL809
TL810
10 Ohm
R808
L802
22 nH
TL833
R806
TL827
10 Ohm
TL834
L801
22 nH
TL836
TL811
S4
TL812
2
2
3
TL815
4
3
1
2
1
1
3
3
1
2
2
1
3
TL832
TL814
TL831
TL822
S5
TL807
2
PTFB241402F
TL806
4
3
TL817
Rev. 04, 2011-04-04
1
2
GATE DUT
3
SIDE 1
GATE DUT
1
Pin G1
SIDE 2
Pin G2