PTFB241402F V1 R250 Infineon Technologies, PTFB241402F V1 R250 Datasheet - Page 5

• Manufacturer Part Number: PTFB241402F V1 R250
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB241402F V1 R250

• Configuration: Single
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1200 mA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37248-4
• Other names: FB241402FV1R25NT

Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Data Sheet
Z Source
G
G
2380 MHz
2320 MHz
Z Load
D
S
D
Z Load
Frequency
5 of 13
MHz
2320
2350
2380
27.0
25.0
27.5
Z Source
R
Z Source W
2380 MHz
–16.0
–8.8
–5.7
2320 MHz
jX
PTFB241402F
3.0
3.0
2.8
R
Rev. 04, 2011-04-04
Z Load W
Z
0
–4.1
–4.5
–4.5
jX
= 50 W