BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 11

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Document ID
BLF6G22-180PN_22LS-180PN_4
Modifications:
BLF6G22-180PN_22LS-180PN_3
BLF6G22-180PN_2
BLF6G22-180PN_1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
Release date
20100304
20091211
20080423
20080221
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•
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All information provided in this document is subject to legal disclaimers.
The format of this data sheet has been redesigned to comply with the new
identity guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
The status of this document has been changed to “Product data sheet”.
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 04 — 4 March 2010
Data sheet status
Product data sheet
Objective data sheet
Product data sheet
Preliminary data sheet
BLF6G22(LS)-180PN
Change notice
-
-
-
-
Power LDMOS transistor
Supersedes
BLF6G22-180PN_
22LS-180PN_3
BLF6G22-180PN_2
BLF6G22-180PN_1
-
© NXP B.V. 2010. All rights reserved.
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