BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 2

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
2. Pinning information
3. Ordering information
BLF6G22-180PN_22LS-180PN_3
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Pin
BLF6G22-180PN (SOT539A)
1
2
3
4
5
BLF6G22LS-180PN (SOT539B)
1
2
3
4
5
Type number
BLF6G22-180PN
BLF6G22LS-180PN -
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Pinning
Ordering information
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
Rev. 04 — 4 March 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
[1]
[1]
BLF6G22(LS)-180PN
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Symbol
© NXP B.V. 2010. All rights reserved.
3
4
3
4
1
2
1
2
Version
SOT539A
SOT539B
sym117
sym117
2 of 14
5
5