BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 3

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
4. Limiting values
5. Thermal characteristics
6. Characteristics
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Table 6.
T
Symbol
V
V
T
T
Symbol Parameter
R
Symbol Parameter
V
V
V
I
I
I
g
R
T
DSS
DSX
GSS
j
fs
stg
case
j
DS
GS
(BR)DSS
GS(th)
GSq
th(j-case)
DS(on)
= 25
°
C per section; unless otherwise specified.
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
thermal resistance from junction to
case
Limiting values
Thermal characteristics
Characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
case temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 4 March 2010
Conditions
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
V
V
= 5 A
DS
DS
= 0 V; I
= 10 V; I
= 32 V; I
= 0 V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
Conditions
T
P
case
L(AV)
= 28 V
= 60 V
BLF6G22(LS)-180PN
GS(th)
GS(th)
= 80 °C;
= 50 W
D
D
D
D
= 0.5 mA
+ 3.75 V;
DS
+ 3.75 V;
= 144 mA
= 800 mA
= 7.2 A
= 0 V
Type
BLF6G22-180PN
BLF6G22LS-180PN
Power LDMOS transistor
Min
65
1.575 1.9
1.725 2.1
-
-
-
-
-
-
-
Min
-
−0.5
−65
-
Typ
-
-
-
25
-
10
0.1
© NXP B.V. 2010. All rights reserved.
Max
65
+13
+150
150
225
Max
-
2.3
2.45
3
5
-
300
-
0.165 Ω
Typ
0.38
0.45
3 of 14
Unit
V
V
°C
°C
°C
Unit
K/W
K/W
Unit
V
V
V
μA
μA
A
nA
S