BLF6G22-180PN NXP Semiconductors, BLF6G22-180PN Datasheet - Page 6

• Manufacturer Part Number: BLF6G22-180PN
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-180PN

• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.165 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W(Typ)
• Power Gain (typ)@vds: 17.5@32VdB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 10S
• Drain Source Resistance (max): 165@6.2Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 27.5%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-180PN,112

NXP Semiconductors
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Fig 6.
(dB)
G
p
21
20
19
18
17
16
15
14
0
V
MHz; carrier spacing 10 MHz.
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
DS
= 32 V; I
10
20
Dq
= 1600 mA; f
30
40
G
1
η
D
p
= 2157.5 MHz; f
50
All information provided in this document is subject to legal disclaimers.
001aah637
P
60
L(AV)
(W)
70
Rev. 04 — 4 March 2010
2
35
30
25
20
15
10
5
0
= 2167.5
(%)
η
D
Fig 7.
ACPR,
IMD3
(dBc)
−20
−30
−40
−50
−60
0
V
MHz; carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
DS
BLF6G22(LS)-180PN
= 32 V; I
10
20
Dq
= 1600 mA; f
30
Power LDMOS transistor
40
1
= 2157.5 MHz; f
50
ACPR
IMD3
© NXP B.V. 2010. All rights reserved.
001aah638
P
60
L(AV)
(W)
70
2
= 2167.5
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