SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 2

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T j =25°C unless otherwise specified
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
DS
= 640 V, I
2
cooling area
D
= 17 A, T
j
3)
= 125 °C
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
4)
Final data
Page 2
V
I
V
T
T
V
V
T
T
f=1MHz, open drain
D
j
j
j
j
GS
GS
DS
GS
GS
=25°C
=150°C
=25°C
=150°C
=1000 A, V GS =V DS
Conditions
=800V, V
=0V, I
=0V, I
=20V, V
=10V, I
Symbol
dv/dt
Symbol
R
R
R
R
R
T
D
D
D
sold
=0.25mA
=17A
thJC
thJC_FP
thJA
thJA_FP
thJA
DS
=11A
GS
SPP17N80C3, SPB17N80C3
=0V
=0V,
min.
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.25
0.78
typ.
typ.
870
0.5
0.7
50
35
3
-
-
-
-
-
-
-
-
-
SPA17N80C3
2003-07-03
max.
max.
0.29
250
260
100
0.6
3.6
3.9
25
62
80
62
-
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA