SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 7

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

9 Typ. drain-source on resistance
R
parameter: T
11 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
1.5
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
A
65
55
50
45
40
35
30
25
20
15
10
1
5
0
0
0
=f(I
GS
4V 4.5V 5V
2
D
); V
5
p
)
j
=150°C, V
4
= 10 µs
DS
10
6
2 x I
8
15
5.5V
GS
D
10
x R
20
12
150°C
25°C
6V
DS(on)max
14
25
16
6.5V
A
I
V
V
D
7V
8V
10V
20V
GS
Final data
35
20
Page 7
10 Drain-source on-state resistance
R
parameter : I
12 Typ. gate charge
V
parameter: I
GS
DS(on)
1.6
1.2
0.8
0.6
0.4
0.2
= f (Q
V
16
12
10
1
0
8
6
4
2
0
-60
0
SPP17N80C3
SPP17N80C3
= f (T
SPP17N80C3, SPB17N80C3
20
Gate
-20
D
D
j
)
= 17 A pulsed
= 11 A, V
40
)
20
0,2
60
98%
V
DS max
typ
80
60
GS
100
SPA17N80C3
= 10 V
0,8 V
100
2003-07-03
120
DS max
°C
nC
T
Q
j
Gate
160
180