SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 6

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

5 Transient thermal impedance
Z
parameter: D = t
7 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f (V
10
10
10
10
10
10
A
70
60
55
50
45
40
35
30
25
20
15
10
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
DS
-7
p
); T
)
10
p
5
= 10 µs, V
-6
j
=25°C
p
/T
10
10
-5
10
15
GS
-4
8V
7V
6V
5V
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
20V
10V
10
20
-3
V
DS
s
t
V
p
Final data
10
30
Page 6
-1
6 Transient thermal impedance FullPAK
Z
parameter: D = t
8 Typ. output characteristic
I
parameter: t
D
thJC
K/W
= f (V
10
10
10
10
10
10
A
35
25
20
15
10
= f (t
-1
-2
-3
-4
5
0
1
0
10
0
DS
-7
SPP17N80C3, SPB17N80C3
p
); T
10
)
p
5
-6
= 10 µs, V
j
10
=150°C
p
-5
/t
10
10
-4
15
10
GS
-3
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
SPA17N80C3
10
20V
10V
8V
7V
20
-2
2003-07-03
10
6.5V
6V
5.5V
5V
4.5V
4V
V
-1
DS
t
V
p
s
10
30
1