SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 4

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Electrical Characteristics
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.00812
SPP_B
0.016
0.031
0.114
0.135
0.059
P
tot
(t)
Value
T
0.00812
j
C
0.016
0.031
0.324
2.522
SPA
0.16
th1
R
th1
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
rr
C
/dt
th2
Unit
K/W
Final data
Page 4
T
V
V
di
T
C
GS
R
j
F
=25°C
C
=25°C
=400V, I
/dt=100A/µs
R
Symbol
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
=I
T
T
=I
case
am b
S
S
SPP17N80C3, SPB17N80C3
,
0.0003562
0.001337
0.001831
0.005033
SPP_B
0.012
0.092
E xternal H eatsink
min.
-
-
-
-
-
-
-
Value
Values
0.0003562
1200
0.001337
0.001831
0.005033
0.008657
typ.
550
15
51
1
0.412
-
-
SPA
SPA17N80C3
2003-07-03
max.
1.2
17
51
-
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs