BUK9219-55A,118 NXP Semiconductors, BUK9219-55A,118 Datasheet

MOSFET N-CH 55V 55A DPAK

BUK9219-55A,118

Manufacturer Part Number
BUK9219-55A,118
Description
MOSFET N-CH 55V 55A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9219-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2920pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0176 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
55 A
Power Dissipation
114000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056240118
BUK9219-55A /T3
BUK9219-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
D
DS
tot
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK9219-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 7 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
Conditions
T
V
see
T
j
mb
GS
≥ 25 °C; T
Figure
= 25 °C; see
= 5 V; T
1; see
mb
j
≤ 175 °C
= 25 °C;
Figure 2
Figure 3
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
Product data sheet
Typ
-
-
-
Max Unit
55
55
114
V
A
W

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BUK9219-55A,118 Summary of contents

Page 1

... BUK9219-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... R GS avalanche energy °C; unclamped j(init) Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET Min = Figure 12 Figure 12 Figure 12 ...

Page 3

... Figure 2 mb ≤ 50 µs pulsed °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET Min Typ Max - - - [ 219 - - 114 ...

Page 4

... T (°C) mb Fig δ D. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03nb64 t = 10μs p 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9219-55A Product data sheet Conditions see Figure 4 minimum footprint ; FR4 board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nb65 t p δ ...

Page 6

... ° ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET Min Typ Max 1 2 500 ...

Page 7

... BUK9219-55A Product data sheet 03nb61 ( 2 (V) DS Fig 6. 03nb58 60 80 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET 35 DSON (mΩ On-state resistance: typical values 100 175 ° °C ...

Page 8

... G Fig 10. Sub-threshold drain current as a function of 03aa33 R DSon (mΩ) 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET - min typ max - gate-source voltage ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET 6000 C iss 5000 C oss 4000 C 3000 rss 2000 1000 0 −2 −1 10 ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... BUK9219-55A Product data sheet Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET Supersedes BUK9219-55A_1 - © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 June 2010 BUK9219-55A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 June 2010 Document identifier: BUK9219-55A ...

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