BUK9219-55A,118 NXP Semiconductors, BUK9219-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2920pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0176 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056240118; BUK9219-55A /T3; BUK9219-55A /T3

NXP Semiconductors
BUK9219-55A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Reverse diode current; typical value
a
2.4
1.8
1.2
0.6
0
−60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0.0
All information provided in this document is subject to legal disclaimers.
T
j
(°C)
03aa28
180
Rev. 02 — 7 June 2010
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
1.0
6000
5000
4000
3000
2000
1000
0
T
10
as a function of drain-source voltage; typical
values
j
V
= 25 °C
C
C
C
SD
−2
iss
oss
rss
(V)
03nb56
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9219-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nb63
(V)
10
2
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