BUK9219-55A,118 NXP Semiconductors, BUK9219-55A,118 Datasheet - Page 11

• Manufacturer Part Number: BUK9219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2920pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0176 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056240118; BUK9219-55A /T3; BUK9219-55A /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK9219-55A
Product data sheet
Document ID
BUK9219-55A_2
Modifications:
BUK9219-55A_1
Revision history
Release date
20100607
20001024
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 02 — 7 June 2010
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9219-55A
-
Supersedes
BUK9219-55A_1
© NXP B.V. 2010. All rights reserved.
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