BUK9219-55A,118 NXP Semiconductors, BUK9219-55A,118 Datasheet - Page 3

MOSFET N-CH 55V 55A DPAK

BUK9219-55A,118

Manufacturer Part Number
BUK9219-55A,118
Description
MOSFET N-CH 55V 55A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9219-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
2920pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0176 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
55 A
Power Dissipation
114000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056240118
BUK9219-55A /T3
BUK9219-55A /T3
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK9219-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
peak drain current is limited by chip, not package.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
Conditions
T
R
T
T
see
T
see
T
pulsed; t
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 49 A; V
Figure 3
Figure 3
= 100 °C; V
= 25 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
Rev. 02 — 7 June 2010
≤ 50 µs
sup
j(init)
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed;
GS
= 25 °C; unclamped
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
GS
= 50 Ω;
Figure
Figure 1
1;
N-channel TrenchMOS logic level FET
[1]
BUK9219-55A
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
55
55
10
38
55
219
114
175
15
55
219
120
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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