IRF9Z24S Vishay, IRF9Z24S Datasheet - Page 2

• Manufacturer Part Number: IRF9Z24S
• Description: MOSFET P-CH 60V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z24S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24S

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z24, SiHF9Z24 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
/T
J
T
V
V
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
GS
GS
V
= 25 °C, I
R
T
DS
Reference to 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
= - 10 V
= - 10 V
J
= 25 °C, I
= 18 Ω, R
= - 48 V, V
MIN.
V
V
V
V
V
-
-
DS
f = 1.0 MHz, see fig. 5
DS
DD
GS
TEST CONDITIONS
DS
= - 25 V, I
F
= V
= - 30 V, I
= 0 V, I
= - 60 V, V
= -11 A, dI/dt = 100 A/µs
V
V
V
GS
DS
S
GS
D
I
GS
D
GS
= - 11 A, V
= 2.5 Ω, see fig. 10
, I
= ± 20 V
= - 25 V,
= - 11 A, V
see fig. 6 and 13
= 0 V,
D
D
= 0 V, T
= - 250 µA
D
= - 250 µA
D
I
D
GS
= - 6.6 A
= - 11 A,
= - 6.6 A
D
TYP.
= 0 V
= - 1 mA
GS
J
-
-
DS
G
= 150 °C
c
= 0 V
c
= - 48 V,
b
b, c
c
b
b
D
S
b, c
MIN.
- 2.0
- 60
1.4
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
40
S09-0073-Rev. A, 02-Feb-09
Document Number: 91091
- 0.056
TYP.
570
360
100
320
65
13
68
15
29
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
- 100
- 500
- 4.0
0.28
- 6.3
S
- 11
- 44
200
640
5.4
19
11
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nC
pF
ns
ns
V
V
Ω
S
A
V