IRF9Z24S Vishay, IRF9Z24S Datasheet - Page 5

• Manufacturer Part Number: IRF9Z24S
• Description: MOSFET P-CH 60V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z24S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24S

Document Number: 91091
S09-0073-Rev. A, 02-Feb-09
Vary t
required I
91091_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
91091_11
AS
15
12
9
6
3
0
25
R
- 10 V
10
G
0.1
10
-2
1
V
10
50
DS
-5
D = 0.50
0.2
0.1
0.05
0.02
0.01
T
t
C
p
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
100
0.01 Ω
L
10
-4
125
Single Pulse
(Thermal Response)
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
150
10
+
-
t
1
-3
V
175
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
0.1
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
R
Vishay Siliconix
x Z
D
t
t
d(off)
1
1
thJC
V
/t
DS
2
t
+ T
2
t
f
C
10
+
-
www.vishay.com
V
V
DD
DD
5