IRF9Z24S Vishay, IRF9Z24S Datasheet - Page 6

• Manufacturer Part Number: IRF9Z24S
• Description: MOSFET P-CH 60V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z24S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24S

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
www.vishay.com
6
- 10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91091_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
800
600
400
200
0
25
V
DD
Starting T
= - 25 V
50
J
, Junction Temperature (°C)
75
100
125
Top
Bottom
12 V
150
V
Fig. 13b - Gate Charge Test Circuit
GS
- 4.5 A
- 7.8 A
- 11 A
Same type as D.U.T.
Current regulator
I
D
0.2 µF
175
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S09-0073-Rev. A, 02-Feb-09
Document Number: 91091
D.U.T.
I
D
+
-
V
DS