IRF9Z24S Vishay, IRF9Z24S Datasheet - Page 3

• Manufacturer Part Number: IRF9Z24S
• Description: MOSFET P-CH 60V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z24S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91091
S09-0073-Rev. A, 02-Feb-09
91091_02
91091_01
10
10
10
10
1
0
1
0
10
10
-1
Bottom
-1
Top
Bottom
Top
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
V
DS
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
175 °C
25 °C
IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
10
10
- 4.5 V
1
- 4.5 V
1
91091_03
91091_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 11 A
= - 10 V
- V
5
T
GS ,
J ,
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
°
6
C
7
Vishay Siliconix
175
20 µs Pulse Width
V
°
8
DS
C
= -
25 V
www.vishay.com
9
10
3