IRF9Z24S Vishay, IRF9Z24S Datasheet - Page 4

• Manufacturer Part Number: IRF9Z24S
• Description: MOSFET P-CH 60V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9Z24S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24S

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
www.vishay.com
4
91091_06
91091_05
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1250
1000
750
500
250
20
16
12
0
8
4
0
10
0
I
0
D
= - 11 A
- V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
10
= - 30 V
V
C
C
C
GS
iss
rss
oss
V
= 0 V, f = 1 MHz
= C
= C
DS
= C
10
= - 48 V
gs
gd
ds
15
1
+ C
+ C
gd
gd
For test circuit
see figure 13
, C
C
C
C
ds
iss
oss
rss
20
Shorted
25
91091_07
91091_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
Fig. 8 - Maximum Safe Operating Area
10
-1
1
0
5
1
2
5
2
5
2
0.5
0.1
2
Operation in this area limited by R
- V
- V
1.5
5
SD
DS
175
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
°
C
2
T
T
Single Pulse
2.5
C
J
= 175 °C
= 25 °C
5
10
S09-0073-Rev. A, 02-Feb-09
Document Number: 91091
25
3.5
2
°
C
5
10
100
10
1
10
ms
4.5
µs
ms
2
DS(on)
V
µs
GS
2
= 0 V
5
5.5
10
3